Reducing temperature dependence of semiconductor lasers using nonidentical multiple quantum wells

Ching-Fuh Lin; Yi-Shin Su; Di-Ku Yu; Bing-Ruey Wu

doi:10.1117/12.467941

22 May 2002 Reducing temperature dependence of semiconductor lasers using nonidentical multiple quantum wells

Ching-Fuh Lin, Yi-Shin Su, Di-Ku Yu, Bing-Ruey Wu

Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002) https://doi.org/10.1117/12.467941
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

Semiconductor lasers with InGaAsP/InP nonidentical multiple quantum wells (MQWs) for optical communication are experimented to show the improved temperature characteristics. With proper layout of the nonidentical MQWs, the characteristic temperature of the laser diodes is increased. Also, the differential quantum efficiency increases to around 40% for the temperature increasing from 30 degree(s)C to 40 degree(s)C and approximately remains at this value for temperature above 40 degree(s)C. The reason is attributed to the carrier redistribution in the nonidentical MQWs as temperature increases. The change in temperature causes certain QWs to have increased carriers. Therefore their corresponding gain increases to overcome other effects that degrade temperature characteristics. With proper design of nonidentical MQWs, significant improvement on temperature characteristics of semiconductor lasers is possible.

Citation Download Citation

Ching-Fuh Lin, Yi-Shin Su, Di-Ku Yu, and Bing-Ruey Wu "Reducing temperature dependence of semiconductor lasers using nonidentical multiple quantum wells", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); https://doi.org/10.1117/12.467941

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