Novel hybrid III-V/II-VI mid-infrared laser structures with high asymmetric band offset confinements

Yury P. Yakovlev; Sergey V. Ivanov; Konstantin D. Moiseev; Andrei M. Monakhov; Victor A. Solov'ev; Irina V. Sedova; Yakov V. Terent'ev; Alexei A. Toropov; Maya P. Mikhailova; Boris Ya. Meltzer; Petr S. Kop'ev

doi:10.1117/12.467948

22 May 2002 Novel hybrid III-V/II-VI mid-infrared laser structures with high asymmetric band offset confinements

Yury P. Yakovlev, Sergey V. Ivanov, Konstantin D. Moiseev, Andrei M. Monakhov, Victor A. Solov'ev, Irina V. Sedova, Yakov V. Terent'ev, Alexei A. Toropov, Maya P. Mikhailova, Boris Ya. Meltzer, Petr S. Kop'ev

Author Affiliations +

Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002) https://doi.org/10.1117/12.467948
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

We present a novel hybrid laser structure based on III-V and II-VI compounds combining some advantages of type I and type II heterojunctions in one heterostructure. Such design allows the achievement of large energy offsets at the interface in the conduction and the valence band exceeding of 1.0 eV in order to provide good electron and hole confinement. P-AlAsSb/n-InAs/N-Cd(Mg)Se laser heterostructures were grown on p-InAs substrates by original technology of MBE method in two separate growth chambers consequently. Photoluminescence spectra included tow emission bands at hv=0.41 eV and hv=2.08 eV associated with InAs and CdMgSe bulk recombination transitions, respectively. Intense electroluminescence was observed at (lambda) =2.73micrometers (77K) and (lambda) =3.12micrometers (300K). Weak temperature dependence of spontaneous emission indicated the effective carrier confinement in the InAs layer due to large potential barriers ((Delta) sE_c=1.28eV and (Delta) E_V=1.68eV). Proposed hybrid III-V/II-VI heterostructure is very promising for creation the mid-infrared lasers with improved performances operating in the spectral range of 3- 5micrometers .

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Yury P. Yakovlev, Sergey V. Ivanov, Konstantin D. Moiseev, Andrei M. Monakhov, Victor A. Solov'ev, Irina V. Sedova, Yakov V. Terent'ev, Alexei A. Toropov, Maya P. Mikhailova, Boris Ya. Meltzer, and Petr S. Kop'ev "Novel hybrid III-V/II-VI mid-infrared laser structures with high asymmetric band offset confinements", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); https://doi.org/10.1117/12.467948

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