Paper
21 May 2002 GaAs PIN photodetectors for 10 Gbit/s data communication
Lars Dillner, Roger Loow, Elsy Odling, Eva Backlin, Thomas Aggerstam
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Abstract
For high speed data communication, Zarlink has developed GaAs PIN detectors with three different diameters of the apertures: 40 micrometers , 55 micrometers and 70 micrometers . To minimize the capacitance we have chosen to use a mesa structure on a semi-insulating substrate. At íV2 Volt bias the capacitances are 110 fF, 160 fF and 230 fF for the 40 micrometers , 55 micrometers and 70 micrometers detectors respectively. For all diameters the series resistance is about 5 (Omega) and the responsivities are 0.6 A/W. At-V10 Volt bias, the dark current is less than 100 pA. Link experiments show open eye diagrams at 10 Gbit/s for a 70 micrometers unamplified PIN detector, both at room temperature and at 90 degree(s)C.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lars Dillner, Roger Loow, Elsy Odling, Eva Backlin, and Thomas Aggerstam "GaAs PIN photodetectors for 10 Gbit/s data communication", Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); https://doi.org/10.1117/12.467664
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KEYWORDS
Sensors

Capacitance

Gallium arsenide

Data communications

Resistance

Vertical cavity surface emitting lasers

Receivers

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