PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The farfield characteristics of a InGaAs/GaAs quantum dots laser was investigated. It was found that the farfield picture on the screen in front of the laser was composed of two straight lines due to the side modes of the junction. And the straight lines consisted of three bright spots, which we believe were presumably originated from the feedback of the substrate and the capping layer.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Yongqiang Ning, Xin Gao, Lijun Wang, Peter M. Smowton, Peter Blood, "Farfield characteristics of InGaAs/GaAs quantum dot laser," Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); https://doi.org/10.1117/12.445712