RIE is a promising way to fabricate high aspect ratio micro-structures and the PMMA is a widely used thick resist. In this paper, we developed a reactive ion etching of PMMA process in O2 plasma to fabricate micro-structures. High etch rate(0.5 micrometers /min) and smooth surface were achieved. In order to get high selectivity, We use Ni film as mask, which was patterned by photochemical etching. The etch results showed that vertical etch profile(base angle>88 degree(s)), high aspect ratio (5:1) and through-out etching of PMMA(100micrometers in thickness) could be obtained if select optimum etching conditions. We also found that the self-bias is one of the critical parameters during the process. If etching power was too high, the surface would be deformed due to the high energetic particles bombardment
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