Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

Giho Cha; Youngchul Kim; Hyungwoo Jang; Hyunsoon Kang; Changsub Song

doi:10.1117/12.444659

15 October 2001 Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

Giho Cha, Youngchul Kim, Hyungwoo Jang, Hyunsoon Kang, Changsub Song

Proceedings Volume 4600, Advances in Microelectronic Device Technology; (2001) https://doi.org/10.1117/12.444659
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

Silicon direct bonding technique was successfully applied for the fabrication of high voltage IGBT (Insulated Gate Bipolar Transistor). In this work, 5 inch, p-type CZ wafer for handle wafer and n-type FZ wafer for device wafer were used and bonding the two wafers was performed at reduced pressure (1mmTorr) using a modified vacuum bonding machine. Since the breakdown voltage in high voltage device has been determined by the remained thickness of device layer, grinding and CMP steps should be carefully designed in order to acquire better uniformity of device layer. In order to obtain the higher removal rate and the final better uniformity of device layer, the harmony of the two processes must be considered. We found that the concave type of grinding profile and the optimal thickness of ground wafer was able to reduce the process time of CMP step and also to enhance the final thickness uniformity of device layer up to +/- 1%. Finally, when compared epitaxy layer with SDB wafer, the SDB wafer was found to be more favorable in terms of cost and electrical characteristics.

Citation Download Citation

Giho Cha, Youngchul Kim, Hyungwoo Jang, Hyunsoon Kang, and Changsub Song "Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)", Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); https://doi.org/10.1117/12.444659

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