Characterization of internal stress of silicon oxinitride thin films fabricated by plasma-enhanced chemical vapor deposition: applications in integrated optics

Christophe Gorecki; Andrei Sabac; Michal Jozwik; Seung Seoup Lee

doi:10.1117/12.447343

30 October 2001 Characterization of internal stress of silicon oxinitride thin films fabricated by plasma-enhanced chemical vapor deposition: applications in integrated optics

Christophe Gorecki, Andrei Sabac, Michal Jozwik, Seung Seoup Lee

Author Affiliations +

Proceedings Volume 4596, Advanced Photonic Sensors and Applications II; (2001) https://doi.org/10.1117/12.447343
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore

Abstract

In view of applications of SiO_xN_ythin films in MOEMS technology, a study of optomechanical characteristics of this material PECVD deposited are investigated. To optimize the quality of SiO_xN_y layers we established the relationship between the chemical properties, optical performances and micromechanical stress of deposited films. To use the SiO_xN_y thin film for the core layer of a channel waveguide, we need to obtain a structure with low optical attenuation, well-controlled refractive index, and low-internal stress. To study the stress characteristics of SiO_xN_y material we used an interferometric technique, and we fabricated for this purpose special membranes with deposition of variable quality SiO_xN_y thin films.

Citation Download Citation

Christophe Gorecki, Andrei Sabac, Michal Jozwik, and Seung Seoup Lee "Characterization of internal stress of silicon oxinitride thin films fabricated by plasma-enhanced chemical vapor deposition: applications in integrated optics", Proc. SPIE 4596, Advanced Photonic Sensors and Applications II, (30 October 2001); https://doi.org/10.1117/12.447343

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