Paper
29 October 2001 Optical position detectors based on thin film amorphous silicon
Jasmine Henry, John Livingstone
Author Affiliations +
Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446548
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
Thin film optical position sensitive detectors (PSDs) based on novel hydrogenated amorphous silicon Schottky barrier (SB) structures are compared in this work. The three structures reported here have been tested under different light sources to measure their linear properties and wavelength response characteristics. The sputtered a-Si sensors were configured as layered structures of platinum, a-Si and indium tin oxide, forming SB-i-n devices and exhibited linear properties similar to multi-layer a-Si p-i- n devices produced by complex chemical vapor deposition procedures, which involve flammable and toxic gases. All structures were test4ed as possible configurations for 2D sensors. The devices were tested under white light, filtered white light and also a red diode laser. Each of the three structures responded quite differently to each of the sources. Results, based on the correlation coefficient, which measures the linearity of output and which has a maximum value of 1, produced r values ranging between 0.992 to 0.999, in the best performances.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jasmine Henry and John Livingstone "Optical position detectors based on thin film amorphous silicon", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); https://doi.org/10.1117/12.446548
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KEYWORDS
Amorphous silicon

Platinum

Optical filters

Sensors

Light sources

Measurement devices

Optical testing

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