Paper
29 October 2001 High-power grating-coupled surface-emitting diode lasers
Author Affiliations +
Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446533
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
Both government and industry have a long-standing interest in developing low-cost high-power semiconductor lasers for a variety of applications. These include material processing, long range sensing, and long-range communications. Key development goals are high brightness and high efficiency. This paper will review some of the applications, key laser performance features desired, and some of the past accomplishments in high power diode lasers form the High Power Semiconductor Laser Technology program. One of the primary outgrowths of HPSLT was the Grating Coupled Surface Emitting Laser (GCSEL). GCSEL progress will be highlighted.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Pete Latham, Chandrasekhar Roychoudhuri, and Jeff Bullington "High-power grating-coupled surface-emitting diode lasers", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); https://doi.org/10.1117/12.446533
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KEYWORDS
Semiconductor lasers

Laser applications

High power lasers

Fabry–Perot interferometers

Diffraction gratings

Laser marking

Diodes

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