Porous silicon as a sacrificial layer used in rf MEMS

Peng Cong; Li-Tian Liu; Yong Ding

doi:10.1117/12.448993

21 November 2001 Porous silicon as a sacrificial layer used in rf MEMS

Peng Cong, Li-Tian Liu, Yong Ding

Proceedings Volume 4592, Device and Process Technologies for MEMS and Microelectronics II; (2001) https://doi.org/10.1117/12.448993
Event: International Symposium on Microelectronics and MEMS, 2001, Adelaide, Australia

Abstract

This paper designs a process to prepare RF-MEMS using porous silicon (PS) as a sacrificial layer. The details of the process are discussed, such as the influences of H₂SO₄, H₃PO₄, and HF on the PS layer. KOH and TMAH solutions are used to remove the PS layer through small etching holes and to reduce the probability of the potential film damage, ethanol is used to dilute the KOH and TMAH solution. After the process, a suspended thin SiO₂ film as large as 2x2mm² is successfully achieved and the maximum lateral distance between the small etching holes is 540micrometers . Finally, two application examples are given.

Citation Download Citation

Peng Cong, Li-Tian Liu, and Yong Ding "Porous silicon as a sacrificial layer used in rf MEMS", Proc. SPIE 4592, Device and Process Technologies for MEMS and Microelectronics II, (21 November 2001); https://doi.org/10.1117/12.448993

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