Differential current mode I/O pads for 2 Gb/s in gallium arsenide

Roberto Esper-Chain; Felix Tobajas; Roberto Sarmiento

doi:10.1117/12.449151

21 November 2001 Differential current mode I/O pads for 2 Gb/s in gallium arsenide

Roberto Esper-Chain, Felix Tobajas, Roberto Sarmiento

Proceedings Volume 4591, Electronics and Structures for MEMS II; (2001) https://doi.org/10.1117/12.449151
Event: International Symposium on Microelectronics and MEMS, 2001, Adelaide, Australia

Abstract

Today's increasing data rates in digital communication circuits are demanding higher speeds in the interchip communication. This throughput can be achieved using high rate serial links. Good noise inmunity can be obtained by means of differential strategies and an important power reduction can be obtained by using current mode operation. In this paper, a innovative differential current mode transmitter/receiver pair is presented which combines both, good noise inmunity with low power dissipation.

Citation Download Citation

Roberto Esper-Chain, Felix Tobajas, and Roberto Sarmiento "Differential current mode I/O pads for 2 Gb/s in gallium arsenide", Proc. SPIE 4591, Electronics and Structures for MEMS II, (21 November 2001); https://doi.org/10.1117/12.449151

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