High-speed traveling-wave electro-absorption modulators

Yijen Chiu; Sheng Z. Zhang; Volkan Kaman; Joachim Piprek; John Edward Bowers

doi:10.1117/12.455417

27 December 2001 High-speed traveling-wave electro-absorption modulators

Yijen Chiu, Sheng Z. Zhang, Volkan Kaman, Joachim Piprek, John Edward Bowers

Proceedings Volume 4490, Multifrequency Electronic/Photonic Devices and Systems for Dual-Use Applications; (2001) https://doi.org/10.1117/12.455417
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Electroabsorption modulators (EAMs) based on the quantum confined Stark effect in multiple quantum wells (MQWs) have advantages for high-speed, low drive voltage, and high extinction ratio applications. In this paper, a traveling- wave electrode structure is proposed to achieve high bandwidths with long devices and lower drive voltages at 1.55 micrometers wavelength. An InGaAsP/InGaAsP MQW traveling-wave electroabsorption modulator (TWEAM) with a bandwidth above 20 GHz is fabricated. A drive voltage of 1.2 V for an extinction ratio of 20-dB is demonstrated. The effects of microwave transmission on the high-speed performance of TWEAMs are discussed. Successful data transmission experiments at 30 Gbit/s show a promising system performance of these devices. By using an integrated tandem TWEAM, pulse data transmission above 100 Gbit/s is achieved.

Citation Download Citation

Yijen Chiu, Sheng Z. Zhang, Volkan Kaman, Joachim Piprek, and John Edward Bowers "High-speed traveling-wave electro-absorption modulators", Proc. SPIE 4490, Multifrequency Electronic/Photonic Devices and Systems for Dual-Use Applications, (27 December 2001); https://doi.org/10.1117/12.455417

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