Infrared photoluminescence of InAs/GaAs epilayers grown by molecular beam epitaxy

Guhyun Kim; Jaesun Lee; Hee Y. You; Young M. Moon; Jung B. Choi; Jae-Young Leem

doi:10.1117/12.448184

12 November 2001 Infrared photoluminescence of InAs/GaAs epilayers grown by molecular beam epitaxy

Guhyun Kim, Jaesun Lee, Hee Y. You, Young M. Moon, Jung B. Choi, Jae-Young Leem

Proceedings Volume 4454, Materials for Infrared Detectors; (2001) https://doi.org/10.1117/12.448184
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Low temperature IR photoluminescence (PL) spectroscopy has been performed on InAs/GaAs epilayers with the thickness of 0.4, 0.5, 0.75 and 1.5 micrometers grown by molecular bema epitaxy for potential use as active layers in InAs-based IR lasers. A bulk InAs grown by Bridgeman technique is included for comparison with InAs epilayers. For the bulk InAs, three broad near-band-edge emission peaks are observed at 417 meV, 403 meV, and 383 meV at 10 K. Temperature and excitation power dependence of PL intensity give evidence that they may be related to band-to-band and/or exciton emission, conduction band-to-acceptor, and DAP recombination, respectively. For InAs/GaAs epilayers, the PL intensities of emission peaks are much smaller and emission peaks appear at higher energy side with maximum shift of about 5 meV, compared with the bulk sample. This blue shift can be attributed to strain effect due to large lattice mismatch between InAs epilayers and GaAs subset rates. As the thickness of epilayer increases the peak shift becomes small, which implies that the strain effect is reduced.

Citation Download Citation

Guhyun Kim, Jaesun Lee, Hee Y. You, Young M. Moon, Jung B. Choi, and Jae-Young Leem "Infrared photoluminescence of InAs/GaAs epilayers grown by molecular beam epitaxy", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); https://doi.org/10.1117/12.448184

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