Induced-charge distribution in vertical quantum dots

S. Bednarek; B. Szafran; J. Adamowski

doi:10.1117/12.425415

17 April 2001 Induced-charge distribution in vertical quantum dots

S. Bednarek, B. Szafran, J. Adamowski

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425415
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

We have studied the physical processes, which underlie the operation of a vertical quantum-dot nanodevice as a single- electron transistor. The Poisson-Schroedinger problem has been solved for the entire nanostructure. We have calculated the charge density on the quantum dot/gate electrode interface and the distribution of the ionized donors in n-GaAs layers close to the quantum-dot region. We have found that the characteristic rapid variation of the distribution of the ionized donors is responsible for the essential change of the electron confinement potential, which leads to a strong modification of the single- electron tunneling.

Citation Download Citation

S. Bednarek, B. Szafran, and J. Adamowski "Induced-charge distribution in vertical quantum dots", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425415

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