Paper
10 August 2001 Very high quality crystals of wide-gap II-VI semiconductors: What for?
Andrzej Mycielski, A. Szadkowski, W. Kaliszek, B. Witkowska
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Abstract
A review of some of the most important applications of the wide-gap II-VI semiconductors is presented, the key parameters of the crystals for specific applications are emphasized, and the necessity of growing crystals of very high quality is substantiated. Modern methods of growth of high-quality wide-gap II-VI semiconductor crystals are shortly descried. The results of the physical vapor transport method, chosen by the authors for ZnTe and CdZnTe crystals are shown.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej Mycielski, A. Szadkowski, W. Kaliszek, and B. Witkowska "Very high quality crystals of wide-gap II-VI semiconductors: What for?", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); https://doi.org/10.1117/12.435854
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Cited by 2 scholarly publications.
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KEYWORDS
Crystals

Semiconductors

Sensors

Tellurium

Electrons

Excitons

Gamma radiation

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