Two-dimensional model of the intrinsic point defects behavior during Cz silicon crystal growth

Anatolii I. Prostomolotov; Natalia A. Verezub

doi:10.1117/12.435807

10 August 2001 Two-dimensional model of the intrinsic point defects behavior during Cz silicon crystal growth

Anatolii I. Prostomolotov, Natalia A. Verezub

Proceedings Volume 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals; (2001) https://doi.org/10.1117/12.435807
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

2D mathematical model of the intrinsic point defects recombination during Cz growth of dislocation-free silicon single crystals is developed. The result of its verification are compared with the data of the 1D model supposing the 'fast' vacancies and interstitial recombination near the liquid-solid interface. For various growth conditions and with use of the calculated 2D temperature fields in Cz silicon crystals the resulting distributions of these intrinsic point defects in a crystal are analyzed.

Citation Download Citation

Anatolii I. Prostomolotov and Natalia A. Verezub "Two-dimensional model of the intrinsic point defects behavior during Cz silicon crystal growth", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); https://doi.org/10.1117/12.435807

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