Paper
10 August 2001 Study of material behavior in DAC: system Si-O (SiOx) and compound Fe78Mn20Si2
Borys M. Efros, Natalya V. Shishkova, Andrzej Misiuk
Author Affiliations +
Abstract
For the last ten years or so, the gasketed diamond anvil cell (DAC) has become the standard tool for the generation of high pressures. Compared with the classical hydraulic piston-cylinder devices, a DAC is three to four orders of magnitude less massive, and will generate static pressures one to two orders of magnitude higher than previous devices. In this paper, we attempt to give an understanding of the gasket behavior which will be helpful to the worker requiring routine and reliable use of a DAC in the submegabar pressure range.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Borys M. Efros, Natalya V. Shishkova, and Andrzej Misiuk "Study of material behavior in DAC: system Si-O (SiOx) and compound Fe78Mn20Si2", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); https://doi.org/10.1117/12.435808
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KEYWORDS
Diamond

Silicon

Crystals

Metals

Solids

Chemical species

Nanocrystals

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