Czochralski growth and characterization of SrLaGa3O7:Ho3+ single crystals

Izabella Pracka; Michal Malinowski; Marek Swirkowicz; Jaroslaw Kisielewski; Andrzej L. Bajor; Andrzej Klos; B. Kaczmarek; B. Surma

doi:10.1117/12.435862

10 August 2001 Czochralski growth and characterization of SrLaGa₃O₇:Ho³⁺single crystals

Izabella Pracka, Michal Malinowski, Marek Swirkowicz, Jaroslaw Kisielewski, Andrzej L. Bajor, Andrzej Klos, B. Kaczmarek, B. Surma

Author Affiliations +

Proceedings Volume 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals; (2001) https://doi.org/10.1117/12.435862
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

Rare-earth doped SrLaGa₃O₇ single crystal are promising laser materials. Also crystal doped with Ho³⁺ ions could be used as efficient laser in visible and near IR regions. Laser materials, generating in visible and IR regions, can be used for optical data recording in micro photolithography and in medicine. SrLaGa₃O₇ single crystal doped with 0.3, 1.5 and 2 at percent of Ho³⁺, respectively were grown by the Czochralski method with use of iridium crucible and after heater. According to EPMA measurements distribution coefficient of Ho³⁺ in SrLaGa₃O₇ was estimated to be k approximately equals 0.22. Optical absorption spectra in visible and IR regions were measured at 300K and 12K respectively. Optical quality of single crystals was checked by the use of computerized imaging spectropolarimeter and polariscopic measurements. Temperature dependence of capacitance and conductivity for different dopant concentrations were also measured.

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Izabella Pracka, Michal Malinowski, Marek Swirkowicz, Jaroslaw Kisielewski, Andrzej L. Bajor, Andrzej Klos, B. Kaczmarek, and B. Surma "Czochralski growth and characterization of SrLaGa₃O₇:Ho³⁺single crystals", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); https://doi.org/10.1117/12.435862

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