Paper
5 September 2001 CF4/O2 plasma simulation and comparison with quartz etch experiment
Han-Ming Wu, Long He, Jeff N. Farnsworth, Gang Liu
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Abstract
In order to study the behavior of fluorine based CF4/O2 plasma in an inductively coupled plasma (ICP) reactor, 2-D axisymmetric simulations are carried out by using Plasmator. The modeling results have provided the spatial distributions of some important plasma and neutral species in the dry etch process. It is found that the prevailing species of the plasma is CF3+ ion. The negative ion density has been proved not significant in the current process. To find the effects of mass flow rate and ICP power, three examples have been calculated. Based on the assumption of that the etch rate is proportional to the ion flux, the comparison between the simulation results and experimental data has been conducted. The results of the trend agree reasonably well. The model paves a way to find the direction of design optimization for plasma etch process experiments.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Han-Ming Wu, Long He, Jeff N. Farnsworth, and Gang Liu "CF4/O2 plasma simulation and comparison with quartz etch experiment", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438386
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KEYWORDS
Plasma

Ions

Etching

Oxygen

Plasma etching

Reactive ion etching

Reticles

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