Process-induced threshold voltage fluctuations on SOI fully depleted technology

Olivier Potavin; Abdelaziz Ahaitouf

doi:10.1117/12.425262

23 April 2001 Process-induced threshold voltage fluctuations on SOI fully depleted technology

Olivier Potavin, Abdelaziz Ahaitouf

Proceedings Volume 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II; (2001) https://doi.org/10.1117/12.425262
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

SOI devices have been shown to present better performances as compared to Bulk MOSFETs for low power-low voltage IC's. Thick film partially depleted SOI transistors have mainly been proposed up to now. However, for 0.1 and sub-0.1 micrometer devices or ultra low power devices, fully depleted thin and ultra-thin SOI MOSFETs with recess channel seem to be the best candidates. Indeed, those devices have been shown to present interesting properties in term of short channel effects, subthreshold swing and electron temperature. But one of the major bottleneck of SOI devices is the final film thickness control. According to the Lim and Fossum long channel model, the front interface threshold voltage is linearly dependent with the doping and the final silicon film thickness. Cumulative fluctuations of oxide growths and the non self alignment of the gate induce a strong threshold voltage variation on wafer and on a whole run. According to experimental results and 2D simulations the impact of the film thickness fluctuations and gate misalignment on the electrical performance will be presented. The maximum variations allowed to reach the design specifications will be extracted and finally a process windows will be defined.

Citation Download Citation

Olivier Potavin and Abdelaziz Ahaitouf "Process-induced threshold voltage fluctuations on SOI fully depleted technology", Proc. SPIE 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II, (23 April 2001); https://doi.org/10.1117/12.425262

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available