Mechanism and annihilation of shallow-trench-isolation-enhanced poly-mask-edge N+/P-well junction leakage

Kelvin Yih-Yuh Doong; Sheng-che Lin; Sunnys Hsieh; Binson Shen; Yu-Hao Yang; Peter Chen; Charles Ching-Hsiang Hsu

doi:10.1117/12.425269

23 April 2001 Mechanism and annihilation of shallow-trench-isolation-enhanced poly-mask-edge N⁺/P-well junction leakage

Kelvin Yih-Yuh Doong, Sheng-che Lin, Sunnys Hsieh, Binson Shen, Yu-Hao Yang, Peter Chen, Charles Ching-Hsiang Hsu

Proceedings Volume 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II; (2001) https://doi.org/10.1117/12.425269
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

The dislocation at the trench corner under Poly mask edges was found to be the major killer of junction leakage in generic logic technology. The impact of the sacrificial oxide (SAC-OX) of the well ion implantation (I/I) module and the source/drain (S/D) I/I to the defect formation are investigated for the first time. The influence on N⁺/P-Well junction leakage caused by the I/I sacrificial oxide from the Rapid Thermal Oxidation (RTO) and Furnace Oxidation (FO) are evaluated by using the process monitoring test structures. Based on the analysis of test structures and the yield evaluation of product, the optimized condition is proposed.

Citation Download Citation

Kelvin Yih-Yuh Doong, Sheng-che Lin, Sunnys Hsieh, Binson Shen, Yu-Hao Yang, Peter Chen, and Charles Ching-Hsiang Hsu "Mechanism and annihilation of shallow-trench-isolation-enhanced poly-mask-edge N⁺/P-well junction leakage", Proc. SPIE 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II, (23 April 2001); https://doi.org/10.1117/12.425269

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