Aspects in HTS laser ablation thin film technology and characterization

M. Branescu; Eniko Gyorgy; Carmen Ristoscu; Ion N. Mihailescu; J. Jaklovsky; V. Mihalache

doi:10.1117/12.425154

9 April 2001 Aspects in HTS laser ablation thin film technology and characterization

M. Branescu, Eniko Gyorgy, Carmen Ristoscu, Ion N. Mihailescu, J. Jaklovsky, V. Mihalache

Proceedings Volume 4397, 11th International School on Quantum Electronics: Laser Physics and Applications; (2001) https://doi.org/10.1117/12.425154
Event: 11th International School on Quantum Electronics: Laser Physics and Applications, 2000, Varna, Bulgaria

Abstract

Thin films of YBa₂Cu₃O_7-x have been obtained on NdGaO₃ substrate by pulsed laser deposition with an excimer KrF* ((lambda) equals 248 nm, (tau) _{FWHM>= 20 ns} laser source from a stoichiometric target. In the present paper we report details of the technology of pulsed laser deposition of high-temperature superconductor thin films, substrates' requirements and high-temperature superconductor thin film characterization. The study of some parameters' intercorrelations for optimization of the technology of the pulsed laser deposition of high-temperature superconductor thin films is also analyzed. Moreover, the contacting technology and techniques of characterization are described.

Citation Download Citation

M. Branescu, Eniko Gyorgy, Carmen Ristoscu, Ion N. Mihailescu, J. Jaklovsky, and V. Mihalache "Aspects in HTS laser ablation thin film technology and characterization", Proc. SPIE 4397, 11th International School on Quantum Electronics: Laser Physics and Applications, (9 April 2001); https://doi.org/10.1117/12.425154

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