Paper
22 February 2001 Isotherms of charge carrier mobility in Pb1-xMnxTe alloys
Elena I. Rogacheva, Igor M. Krivulkin
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417782
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
The temperature dependences of electrical conductivity (sigma) , Hall coefficient RH and charge carrier mobility (mu) H were obtained for the Pb1-XMnXTe solid solutions (x equals 0 divided by 0.025) in the range of 80 - 300 K. On the basis of the temperature dependences of (mu) H, isotherms of charge carrier mobility were plotted. In all the isotherms there was observed anomalous growth in (mu) H in the concentration range of x equals 0.0075 divided by 0.0125. The analogous anomaly was detected in the concentration dependences of power coefficient b in the temperature dependence of mobility (mu) H equals A(DOT)T-b. The revealed anomalies in the concentration dependences of properties are attributed to critical phenomena of percolation type taking place in any solid solution under transition from diluted solid solutions to concentrated ones.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elena I. Rogacheva and Igor M. Krivulkin "Isotherms of charge carrier mobility in Pb1-xMnxTe alloys", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417782
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KEYWORDS
Solids

Temperature metrology

Chemical species

Group IV-VI semiconductors

Chemical analysis

Infrared radiation

Optoelectronics

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