Paper
22 February 2001 Chemical dissolution of III-V and II-VI semiconductor compounds in solutions of HNO3-HCl-lactic acid system
V. N. Tomashik, Z. F. Tomashik, S. G. Danylenko, Ye. O. Bilevych
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417792
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
The nature of CdTe, Cd1-XZnXTe solid solutions, InAs and InSb dissolution in the mixture of HNO3-HCl-lactic acid system are investigated. The surfaces of equal etching rates (Gibbs diagrams) are constructed, limiting stages of dissolution process and regions of polishing solutions in this system are determined.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. N. Tomashik, Z. F. Tomashik, S. G. Danylenko, and Ye. O. Bilevych "Chemical dissolution of III-V and II-VI semiconductor compounds in solutions of HNO3-HCl-lactic acid system", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417792
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KEYWORDS
Etching

Solids

Indium arsenide

Polishing

Surface finishing

Semiconductor materials

Cadmium

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