Mask definition by nanoimprint lithography

D. Lyebyedyev; Hella-Christin Scheer

doi:10.1117/12.425079

9 April 2001 Mask definition by nanoimprint lithography

D. Lyebyedyev, Hella-Christin Scheer

Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001) https://doi.org/10.1117/12.425079
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany

Abstract

Mask definition was performed by use of nanoimprint lithography and subsequent reactive ion etching in an oxygen plasma. Polystyrene was chosen as a polymer mask material. Different features ranging from 400 nm up to 4 micrometers were produced in the polymer layer by nanoimprint. Optimization of the residual layer removal process in oxygen RIE was performed at different pressures and self-bias voltages. Low pressure and high bias voltage are required for high quality mask definition.

Citation Download Citation

D. Lyebyedyev and Hella-Christin Scheer "Mask definition by nanoimprint lithography", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); https://doi.org/10.1117/12.425079

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