Wafer-induced reading error in metal sputtering process

Dae-Joung Kim; Seok-Hwan Oh; Gisung Yeo; Yong-Guk Bae; Jaehwan Kim; Young-Hee Kim

doi:10.1117/12.436793

22 August 2001 Wafer-induced reading error in metal sputtering process

Dae-Joung Kim, Seok-Hwan Oh, Gisung Yeo, Yong-Guk Bae, Jaehwan Kim, Young-Hee Kim

Proceedings Volume 4344, Metrology, Inspection, and Process Control for Microlithography XV; (2001) https://doi.org/10.1117/12.436793
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

For higher density devices electric performances have been focused more than the others. In the case of metal sputtering process some of machine makes local asymmetric deposition across the wafer. In this study, a couple of overlay reading errors which comes from asymmetric metal deposition has been studied in terms of photo process. As a result, scaling error could be reduced down to a certain amount with the optimization of overlay reading marks. However it will not be cleared no matter what kinds of mark are used as long as overlay marks are asymmetry. A symmetric sputtering should be the only way to figure out this problem. In order to make total product, related processes have to be concerned as well.

Citation Download Citation

Dae-Joung Kim, Seok-Hwan Oh, Gisung Yeo, Yong-Guk Bae, Jaehwan Kim, and Young-Hee Kim "Wafer-induced reading error in metal sputtering process", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436793

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