Open-contact failure detection of via holes by using voltage contrast

Hidetoshi Nishiyama; Mari Nozoe; Koji Aramaki; Osamu Watanabe; Yoshihiro Ikeda

doi:10.1117/12.436736

22 August 2001 Open-contact failure detection of via holes by using voltage contrast

Hidetoshi Nishiyama, Mari Nozoe, Koji Aramaki, Osamu Watanabe, Yoshihiro Ikeda

Proceedings Volume 4344, Metrology, Inspection, and Process Control for Microlithography XV; (2001) https://doi.org/10.1117/12.436736
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

We used two techniques to determine the sensitivity of a scanning-electron-microscope-based wafer-inspection system in detecting open-contact failures. (1) The correlation between the contact resistance and the brightness of the voltage-contrast image as captured by the system was obtained experimentally. (2) A voltage-contrast simulation was developed and applied to derive a correlation between resistance and brightness from these results. A close agreement between the experimental results and the calculated values was obtained. We succeeded in clarifying the determinants of the sensitivity of open-contact-failure detection. The brightness, over part of its range, appears to be proportional to log(R*I_p) where R is the resistance and I_p is the irradiating electron-beam current. This relationship indicates that the sensitivity of open-contact failure detection is determined by I_p. Control of I_p can be used to improve the voltage contrast, and this, in turn, can improve the sensitivity of detection.

Citation Download Citation

Hidetoshi Nishiyama, Mari Nozoe, Koji Aramaki, Osamu Watanabe, and Yoshihiro Ikeda "Open-contact failure detection of via holes by using voltage contrast", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436736

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