Implementation of spectroscopic critical dimension (SCD) (TM) for gate CD control and stepper characterization

John A. Allgair; David C. Benoit; Mark Drew Jr.; Robert R. Hershey; Lloyd C. Litt; Pedro P. Herrera; Umar K. Whitney; Marco Guevremont; Ady Levy; Suresh Lakkapragada

doi:10.1117/12.436771

22 August 2001 Implementation of spectroscopic critical dimension (SCD) (TM) for gate CD control and stepper characterization

John A. Allgair, David C. Benoit, Mark Drew Jr., Robert R. Hershey, Lloyd C. Litt, Pedro P. Herrera, Umar K. Whitney, Marco Guevremont, Ady Levy, Suresh Lakkapragada

Author Affiliations +

Proceedings Volume 4344, Metrology, Inspection, and Process Control for Microlithography XV; (2001) https://doi.org/10.1117/12.436771
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

Smaller device dimensions and tighter process control windows have created a need for CD metrology tools having higher levels of precision and accuracy. Furthermore, the need to detect and measure changes in feature profiles is becoming critical to in-line process control and stepper evaluation for sub-0.18micrometers technology. Spectroscopic CD (SCD^TM) is an optical metrology technique that can address these needs. This work describes the use of a spectroscopic CD metrology tool to measure and characterize the focus and exposure windows for the process. The results include comparison to the established in-line CD-SEM, as well as a cross-section SEM. Repeatability and long-term stability data form a gate level nominal process are also presented.

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John A. Allgair, David C. Benoit, Mark Drew Jr., Robert R. Hershey, Lloyd C. Litt, Pedro P. Herrera, Umar K. Whitney, Marco Guevremont, Ady Levy, and Suresh Lakkapragada "Implementation of spectroscopic critical dimension (SCD) (TM) for gate CD control and stepper characterization", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436771

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