Enhancing the rules for optical proximity correction to improve process latitude

Brian Martin; Graham G. Arthur

doi:10.1117/12.436788

22 August 2001 Enhancing the rules for optical proximity correction to improve process latitude

Brian Martin, Graham G. Arthur

Proceedings Volume 4344, Metrology, Inspection, and Process Control for Microlithography XV; (2001) https://doi.org/10.1117/12.436788
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

This work describes how rules for optical proximity correction, derived from lithography simulation, can be favorably changed to improve process latitudes through a metric called a dense-isolated focus/exposure matrix. Example calculations are given to demonstrate the derivation of amended rules.

Citation Download Citation

Brian Martin and Graham G. Arthur "Enhancing the rules for optical proximity correction to improve process latitude", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436788

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available