Electromagnetic scatterometry applied to in-situ metrology

Michael S. Yeung; Eytan Barouch

doi:10.1117/12.436773

22 August 2001 Electromagnetic scatterometry applied to in-situ metrology

Michael S. Yeung, Eytan Barouch

Proceedings Volume 4344, Metrology, Inspection, and Process Control for Microlithography XV; (2001) https://doi.org/10.1117/12.436773
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

In this paper we introduce the concept of single combined field integral equation to the rapidly developing field of in-line metrology employing scatterometry. The new method is very fast and accurate with extreme versatility, enabling very rapid profile analysis of periodic and isolated features. Several examples in 2D and 3D, such as T-top profiles, contact holes and entire SRAM cells, are presented.

Citation Download Citation

Michael S. Yeung and Eytan Barouch "Electromagnetic scatterometry applied to in-situ metrology", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436773

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