DualBeam metrology: a new technique for optimizing 0.13-um photo processes

Steven D. Berger; Denis Desloge; Robert J. Virgalla; Todd Davis; Ted A. Paxton; David Witko

doi:10.1117/12.436768

22 August 2001 DualBeam metrology: a new technique for optimizing 0.13-um photo processes

Steven D. Berger, Denis Desloge, Robert J. Virgalla, Todd Davis, Ted A. Paxton, David Witko

Proceedings Volume 4344, Metrology, Inspection, and Process Control for Microlithography XV; (2001) https://doi.org/10.1117/12.436768
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

A DualBeam Metrology system was investigated for the application of obtaining 3-dimensional (3D) characterization of a 130 nm ground rule KrF photolithography process. Integrated circuit devices are 3-dimensional in structure and, hence, should be best characterized using 3-dimensional techniques to ensure adherence to the design architecture and the desired process window for manufacturing. The need for 3D metrology is further required for the characterization and monitoring of critical layer processes and equipment performance. The metrology used in this investigation is a novel technique for critical feature cross sectioning. The process for DualBeam metrology uses a focused ion beam (FIB) for milling or cutting the cross section through the photoresist or process film. An integrated scanning electron microscope (SEM) provides high-resolution imaging of the features, and a flexible automated metrology package collects and analyzes the data. To demonstrate the feasibility of the technique, critical dimension (CD) data and sidewall angle (SWA) measurements were captured from 130 nm lines and 150 nm contacts at 1:1 densities. The critical criteria for the characterization of the photolithography process window are CD control, depth of focus (DOF), exposure latitude, and feature sidewall angle or profile. Using the DualBeam technique, 2D and 3D data are captured on a single machine platform using a cut, look, and measure routine. A further benefit is the availability of high-resolution cross-sectional SEM images that can be used qualitatively to validate the quantitative data. The results presented here show the performance of this 130 nm ground rule process and the benefits of utilizing this efficient characterization technique.

Citation Download Citation

Steven D. Berger, Denis Desloge, Robert J. Virgalla, Todd Davis, Ted A. Paxton, and David Witko "DualBeam metrology: a new technique for optimizing 0.13-um photo processes", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436768

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