Al-nGaAs ohmic contact formation by H2SeO3 treatment and annealing

Sarunas Meskinis; Kestutis Slapikas; R. Gudaitis

doi:10.1117/12.417613

8 March 2001 Al-nGaAs ohmic contact formation by H2SeO3 treatment and annealing

Sarunas Meskinis, Kestutis Slapikas, R. Gudaitis

Proceedings Volume 4318, Smart Optical Inorganic Structures and Devices; (2001) https://doi.org/10.1117/12.417613
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States

Abstract

In this research the influence of annealing on current- voltage characteristics of selenious acid (H₂SeO₃) treated Al-nGaAs contacts was investigated. Linear Al-nGaAs contacts were obtained by combination of selenious acid treatment and annealing. Dependence of the annealing and selenious acid treatment effects on nGaAs substrate dopants concentration was observed. Specific resistivity of the Al- nGaAs ohmic contact as low as 7.3(DOT)10^-6 (Omega) (DOT)cm² was achieved. Formation of the Al-nGaAs ohmic contact was explained by the interface Se reactions with both GaAs and Al.

Citation Download Citation

Sarunas Meskinis, Kestutis Slapikas, and R. Gudaitis "Al-nGaAs ohmic contact formation by H2SeO3 treatment and annealing", Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); https://doi.org/10.1117/12.417613

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