Paper
16 May 2001 Integrated optoelectronic circuits with InP-based HBTs
Daniel Yap, Y. K. Brown, Robert H. Walden, Tom P. E. Broekaert, K. R. Elliott, M. W. Yung, David L. Persechini, Willie W. Ng, Alan R. Kost
Author Affiliations +
Abstract
Integrated optoelectronic circuits that are capable of very high speeds or high functionality have been demonstrated using InP-based heterojunction bipolar transistors (HBTs). Optoelectronic receivers contain photodetectors fabricated from the same epitaxial material structure as the HBTs. High-functionality digital receivers, analog receiver arrays as well as analog-to-digital converters have been realized. Optoelectronic modulation circuits for signal transmission also contain separately grown, surface-coupled multiple- quantum-well (MQW) modulators.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel Yap, Y. K. Brown, Robert H. Walden, Tom P. E. Broekaert, K. R. Elliott, M. W. Yung, David L. Persechini, Willie W. Ng, and Alan R. Kost "Integrated optoelectronic circuits with InP-based HBTs", Proc. SPIE 4290, Optoelectronic Integrated Circuits and Packaging V, (16 May 2001); https://doi.org/10.1117/12.426901
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CITATIONS
Cited by 4 scholarly publications and 1 patent.
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KEYWORDS
Receivers

Photodetectors

Photonic integrated circuits

Modulators

Transistors

Optical amplifiers

Analog electronics

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