Semiconductor lasers stabilized to spectral holes in rare-earth crystals

Rufus L. Cone; Thomas Boettger; G. J. Pryde; N. M. Strickland; Yongchen Sun; Peter B. Sellin; John L. Carlsten

doi:10.1117/12.432583

9 July 2001 Semiconductor lasers stabilized to spectral holes in rare-earth crystals

Rufus L. Cone, Thomas Boettger, G. J. Pryde, N. M. Strickland, Yongchen Sun, Peter B. Sellin, John L. Carlsten

Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432583
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Single-frequency diode lasers have been frequency stabilized to 200 Hz at 1.5 microns and to 20 Hz at 793 nm with 10-100 ms integration times using narrow spectral holes in the absorption lines of Er3+ and Tm3+ doped cryogenic crystals. The narrow spectral holes are used as frequency references, and this laser performance was obtained without requiring vibrational isolation of either the laser or frequency reference. Kilohertz frequency stability for 100 s integration times is provided by these techniques, and that performance should be improved to the Hertz level and should be extended to longer integration times with further development. Miniaturized external cavity diode lasers and 5 mm-sized reference crystals will provide compact portable packages with a closed cycle cryocooler. The achieved frequency stabilization provides lasers that are ideal for interferometry, high-resolution spectroscopy such as photon echoes, real time optical signal processing based on spectral holography, and other applications requiring ultranarrow-band light sources or coherent detection.

Citation Download Citation

Rufus L. Cone, Thomas Boettger, G. J. Pryde, N. M. Strickland, Yongchen Sun, Peter B. Sellin, and John L. Carlsten "Semiconductor lasers stabilized to spectral holes in rare-earth crystals", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432583

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