X-ray micromachining of high-aspect-ratio MEMS using SU8 ultrathick photoresist

Chantal G. Khan Malek

doi:10.1117/12.424425

6 April 2001 X-ray micromachining of high-aspect-ratio MEMS using SU8 ultrathick photoresist

Chantal G. Khan Malek

Proceedings Volume 4234, Smart Materials; (2001) https://doi.org/10.1117/12.424425
Event: Smart Materials and MEMS, 2000, Melbourne, Australia

Abstract

In this work, a negative-tone photoresist, SU8, used in UV- based micromachining of high-aspect-ratio MEMS has been tested using proximity X-ray printing. Very thick (a few hundreds of micrometers) SU8 resist layers were processed with standard cleanroom equipment and exposed with 1 - 10 keV X-rays at a beamline of the CAMD synchrotron radiation facility. It showed a large increase in sensitivity in deep X-ray lithography compared to the standard poly(methyl-methacrylate) (PMMA) resist, resulting in increased throughput potential. Resist microstructures with aspect-ratio as high as 50 (height 350 : width 7) and vertical sidewalls, were produced. The benefits of using such X-ray resist in X-ray manufacturing are discussed.

Citation Download Citation

Chantal G. Khan Malek "X-ray micromachining of high-aspect-ratio MEMS using SU8 ultrathick photoresist", Proc. SPIE 4234, Smart Materials, (6 April 2001); https://doi.org/10.1117/12.424425

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