Microfabrication technology for high-speed Si-based systems

Hiromu Ishii; Shouji Yagi; Kunio Saito; Akihiko Hirata; Kazuhisa Kudou; Masaki Yano; Tadao Nagatsuma; Katsuyuki Machida; Hakaru Kyuragi

doi:10.1117/12.404913

20 October 2000 Microfabrication technology for high-speed Si-based systems

Hiromu Ishii, Shouji Yagi, Kunio Saito, Akihiko Hirata, Kazuhisa Kudou, Masaki Yano, Tadao Nagatsuma, Katsuyuki Machida, Hakaru Kyuragi

Author Affiliations +

Proceedings Volume 4230, Micromachining and Microfabrication; (2000) https://doi.org/10.1117/12.404913
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

Microfabrication technologies for use as practical methods in > 10-micrometers featured high-speed device fabrication have been developed: the thick polyimide-used damascene process, electroless plating of Ru/Ni on Cu interconnections, the area-restricted chemical mechanical planarization to polish thick polyimide films. Applying their technologies to fabricate RF-components and millimeter-wave components on Si demonstrates excellent characteristics: high-quality factor (Q-factor) in spiral inductor, low transmission loss for sidewall coplanar waveguide (CPW), high-power radiation in CPW-fed sot antenna. The Si-technology-based approach to achieve seamless integration of different kinds of devices, i.e., photonic devices, ULSIs, RF-devices, and millimeter- wave devices are promising ways to fabricate high-speed systems on Si.

Citation Download Citation

Hiromu Ishii, Shouji Yagi, Kunio Saito, Akihiko Hirata, Kazuhisa Kudou, Masaki Yano, Tadao Nagatsuma, Katsuyuki Machida, and Hakaru Kyuragi "Microfabrication technology for high-speed Si-based systems", Proc. SPIE 4230, Micromachining and Microfabrication, (20 October 2000); https://doi.org/10.1117/12.404913

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