Millimeter-Wave InP Gunn Devices

J. D. Crowley

doi:10.1117/12.936160

14 October 1983 Millimeter-Wave InP Gunn Devices

J. D. Crowley

Proceedings Volume 0423, Millimeter Wave Technology II; (1983) https://doi.org/10.1117/12.936160
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

InP Gunn devices are playing an important role in the development of millimeter-wave components as active devices which perform well throughout the millimeter-wave range. Efficient CW oscillators have been developed covering the 35-140 GHz range. InP Gunn diodes are also being used extensively for low noise and medium power amplification. Amplifiers have been constructed for operation up to 95 GHz.

Citation Download Citation

J. D. Crowley "Millimeter-Wave InP Gunn Devices", Proc. SPIE 0423, Millimeter Wave Technology II, (14 October 1983); https://doi.org/10.1117/12.936160

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