Investigation of reverse short channel effect with numerical and compact models

Yuwen Wang; Khee Yong Lim; Wensheng Qian; Xing Zhou

doi:10.1117/12.405435

24 October 2000 Investigation of reverse short-channel effect with numerical and compact models

Yuwen Wang, Khee Yong Lim, Wensheng Qian, Xing Zhou

Proceedings Volume 4228, Design, Modeling, and Simulation in Microelectronics; (2000) https://doi.org/10.1117/12.405435
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

In this paper, a physically based reverse short channel effect (RSCE) threshold voltage compact model is investigated and compared with numerical simulation. A new method to predict RSCE using the compact model is given, which is supported by the TCAD data. A wide range of V_th predictions of nchannel MOSFETs with pile-up structures is conducted. Good prediction results are achieved between the RSCE compact model and TCAD data. The results further support the physics-based RSCE mode, which is useful for both circuit simulation and technology development as well as device design.

Citation Download Citation

Yuwen Wang, Khee Yong Lim, Wensheng Qian, and Xing Zhou "Investigation of reverse short-channel effect with numerical and compact models", Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); https://doi.org/10.1117/12.405435

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