Geometry optimization of the interdigitated metal-semiconductor-metal photodiode structures

Stanislav V. Averine; Yuen Chuen Chan; Yee Loy Lam

doi:10.1117/12.405430

24 October 2000 Geometry optimization of the interdigitated metal-semiconductor-metal photodiode structures

Stanislav V. Averine, Yuen Chuen Chan, Yee Loy Lam

Proceedings Volume 4228, Design, Modeling, and Simulation in Microelectronics; (2000) https://doi.org/10.1117/12.405430
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

The optimum geometry of the interdigital Metal- Semiconductor-Metal photodetector (MSM-PD) is discussed. From the calculated MSM-PD capacitance and transit time of optically generated carriers, the response time is evaluated and analyzed. We propose a simple design rule for achieving better high-speed response of the MSM-detector. The optimum interelectrode spacing for interdigitized MSM-PD has been established. The potentialities of different semiconductor materials for high-speed MSM-detectors are examined.

Citation Download Citation

Stanislav V. Averine, Yuen Chuen Chan, and Yee Loy Lam "Geometry optimization of the interdigitated metal-semiconductor-metal photodiode structures", Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); https://doi.org/10.1117/12.405430

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