Paper
3 October 2000 Correlation between the low-frequency electrical noise of high-power quantum well lasers and device quality
Guijun Hu, Jiawei Shi, Sumei Zhang, Yu Lu, LiYun Qi, Hongyan Li, Fenggang Zhang
Author Affiliations +
Proceedings Volume 4220, Advanced Photonic Sensors: Technology and Applications; (2000) https://doi.org/10.1117/12.401718
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China
Abstract
The low frequency electrical noise and electric derivative (IdV/dI-I) are measured at different conditions. The correlation between the noise and device quality is discussed, the results indicate that the low frequency electrical noise of 808 nm high power semiconductor laser is mainly 1/f noise and has good relation with device quality.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guijun Hu, Jiawei Shi, Sumei Zhang, Yu Lu, LiYun Qi, Hongyan Li, and Fenggang Zhang "Correlation between the low-frequency electrical noise of high-power quantum well lasers and device quality", Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); https://doi.org/10.1117/12.401718
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KEYWORDS
High power lasers

Quantum wells

Reliability

Semiconductor lasers

Astatine

Resistance

Temperature metrology

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