Reliability certification of semiconductor devices using Goldthwaite diagrams

Floarea Baicu; Sever Irin Spanulescu; Anca E. Gheorghiu

doi:10.1117/12.410077

23 August 2000 Reliability certification of semiconductor devices using Goldthwaite diagrams

Floarea Baicu, Sever Irin Spanulescu, Anca E. Gheorghiu

Proceedings Volume 4182, Process Control and Diagnostics; (2000) https://doi.org/10.1117/12.410077
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States

Abstract

Beginning at observation that if a Goldthwaite diagram is draw a line (lambda) equals constant, all the curves of this diagrams are cutes in a point that are a value equal with that constant. If the constant is choose the maximum admissible value of failure rate multiplied by time of qualified life, the intersection of (lambda) line with the different (sigma) _i curves, corresponding for a certain semiconductor devices, can determinate the value of median time t_mi that corresponds t functioning temperature. In the laboratory was achieved accelerated aging for some semiconductor devices types. Parameters of accelerated aging were chosen so that they are not introducing any new failure mechanism non typical for normal functioning. Necessary time for accelerated aging test of this device was determinate using Arrhenius equation, for acceptance quality level 5 percent. For those devices, the time accelerated aging was determinate around on hundred hours. The value of failure rate certification was 10²-10³ Fits. The obtained results were validated therefore comparing then the results obtained using classical method for reliability testing, having the duration of 1000-200h. In this mode we can solve the problems of a long and expensive testing time before launching on the market a new devices.

Citation Download Citation

Floarea Baicu, Sever Irin Spanulescu, and Anca E. Gheorghiu "Reliability certification of semiconductor devices using Goldthwaite diagrams", Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000); https://doi.org/10.1117/12.410077

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