Paper
29 November 2000 Theoretical analysis of InGaAsP multiple-quantum-well electroabsorption modulators with both polarization insensitivity and negative chirp
Chun-Lei Guo, Yi Zeng, Zhi-Biao Hao, Yi Luo
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Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408460
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Polarization-sensitivity of electroabsorption (EA) modulators is analyzed by fractional-dimensional approach. Chirping parameter (alpha) is then calculated using Kramers- Kronig relations. It is found that polarization insensitive and negative chirp operation can be realized simultaneously for InGaAsP multiple-quantum-well EA modulators with optimized well width and amount of strain. We propose a polarization insensitive InGaAsP EA modulator with 9 nm wide 0.38% tensile-strained quantum wells. The modulation characteristics remains polarization independent up to 80 kV/cm, corresponding to an extinction ratio of over 15 dB, and the chirping parameter (alpha) is estimated to be around -0.25.
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Chun-Lei Guo, Yi Zeng, Zhi-Biao Hao, and Yi Luo "Theoretical analysis of InGaAsP multiple-quantum-well electroabsorption modulators with both polarization insensitivity and negative chirp", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408460
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KEYWORDS
Modulators

Polarization

Modulation

Excitons

Quantum wells

3D modeling

Electrons

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