Properties of the film electroluminescence of ZnS:TbF3

Dawei He; Qingguo Yuan; Guanghui Yu; Yongsheng Wang; Xurong Xu

doi:10.1117/12.408414

29 November 2000 Properties of the film electroluminescence of ZnS:TbF₃

Dawei He, Qingguo Yuan, Guanghui Yu, Yongsheng Wang, Xurong Xu

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408414
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

The electroluminescence is reported from ZnS doped with terbium (Tb) thin films prepared by radio frequency magnetron sputtering method. We have systematically investigated the characteristics of the ZnS:TbF₃ thin film electroluminescence devices, such as film characteristics of the ZnS/Tb active layer, substrate temperatures during magnetron sputtering and Tb concentration of the active layer, etc. From the results obtained, the mechanism of electroluminescence of thin film EL devices is discussed, and then the relationships between the EL characteristics and the device parameters are considered.

Citation Download Citation

Dawei He, Qingguo Yuan, Guanghui Yu, Yongsheng Wang, and Xurong Xu "Properties of the film electroluminescence of ZnS:TbF₃", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408414

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