Degradation of Isc and the pattern of degradation of a-Si:H

Yeshitila G. Michael; Ilia M. Kachirski

doi:10.1117/12.408445

29 November 2000 Degradation of I_sc and the pattern of degradation of a-Si:H

Yeshitila G. Michael, Ilia M. Kachirski

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408445
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

The pattern of light induced degradation, i.e. the degree of degradation of a-Si:H pinpin solar cell parameters were studied on different i-layer thickness using high intensity (approximately 10 AM 1.5) illumination. It was found that stacked cells do not show a uniform degradation pattern as in the case of single junction solar cells. In particular, the degradation in short-circuit current Isc of stacked cells shows a big difference for thick (approximately 500 nm) and thin (approximately 400 nm) pinpin cells. It was found that degradation of the stacked cells with thick bottom layers exhibit a degradation pattern similar to that of single junction cells, i.e. the degradation in efficiency comes from the fill factor and the short circuit current, while open circuit voltage being degraded slightly. The degradation in short circuit current of cells with thin bottom layers is negligibly small.

Citation Download Citation

Yeshitila G. Michael and Ilia M. Kachirski "Degradation of I_sc and the pattern of degradation of a-Si:H", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408445

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