Co-diffusion thin layer of phosphorus and boron for preparation of silicon BSF solar cell

Wan-Tao Yu; Guang-Pu Wei

doi:10.1117/12.408413

29 November 2000 Co-diffusion thin layer of phosphorus and boron for preparation of silicon BSF solar cell

Wan-Tao Yu, Guang-Pu Wei

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408413
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Co-diffusion processing is emerging as a promising simplified process for manufacture of terrestrial back surface field (BSF) solar cells. In this work, we present results about co-diffusion of two dopant elements (phosphorus and boron) in a single thermal cycle in order to form emitter and BSF thin layer simultaneously. According to the measured sheet resistance, it was found that uniform, stable and controllable diffusion layers on front and back surface of silicon wafer can be obtained with co-diffusion method. Using the co-diffusion method, some silicon BSF solar cells with an efficient of more than 12% (at AM1) were prepared. The measurement results of minority carrier lifetime show that boron diffusion in back side of silicon wafer has a gettering effect on the p-n junction area and can improve the characteristics of solar cells.

Citation Download Citation

Wan-Tao Yu and Guang-Pu Wei "Co-diffusion thin layer of phosphorus and boron for preparation of silicon BSF solar cell", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408413

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