Cosputtering effect in titanium oxides by ion-beam sputtering deposition

JinCherng Hsu; Cheng-chung Lee; LuuGen Hwa

doi:10.1117/12.392176

11 July 2000 Cosputtering effect in titanium oxides by ion-beam sputtering deposition

JinCherng Hsu, Cheng-chung Lee, LuuGen Hwa

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392176
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

Cosputtering of titanium oxide films with aluminum (al), fuse silicon (SiO₂) and silicon (Si) is investigated. Their optical properties, surface morphology and structure show better than pure titanium oxide. In general, the extinction coefficient and surface roughness of the cosputtered films are smaller than the pure TiO₂ film. Also, the microstructure of the cosputtered films are improved to an amorphous structure even though post-baked up to 450 degree(s)C.

Citation Download Citation

JinCherng Hsu, Cheng-chung Lee, and LuuGen Hwa "Cosputtering effect in titanium oxides by ion-beam sputtering deposition", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392176

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