Built-in electric field investigation on InAs and InGaAs nanostructures by photoreflectance

ChihMing Lai; JungHao Huang; Gwo-Jen Jan

doi:10.1117/12.392181

11 July 2000 Built-in electric field investigation on InAs and InGaAs nanostructures by photoreflectance

ChihMing Lai, JungHao Huang, Gwo-Jen Jan

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392181
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

The photoreflectance has been measured on InGaAs/GaAs multiple strained quantum wells structures at room temperature. The Franz-Keldysh Oscillation (FKOs) features are clearly observed on photoreflectance spectra. Based on FKOs features above the energy band gap, the built-in electric field was studied by conventional FKOs calculation and the Fast Fourier Transform, and Airy function fit techniques. The built-in electric fields were evaluated and discussed. The results show that Fast Fourier Transform could provide an accurate and fast method to calculate the built-in electric field.

Citation Download Citation

ChihMing Lai, JungHao Huang, and Gwo-Jen Jan "Built-in electric field investigation on InAs and InGaAs nanostructures by photoreflectance", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392181

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