Mask critical dimension error on optical lithography

Tae-Seung Eom; Sang-Sool Koo; Seung-Weon Paek; Hee-Bom Kim; Chang-Nam Ahn; Ki-Ho Baik

doi:10.1117/12.392047

19 July 2000 Mask critical dimension error on optical lithography

Tae-Seung Eom, Sang-Sool Koo, Seung-Weon Paek, Hee-Bom Kim, Chang-Nam Ahn, Ki-Ho Baik

Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392047
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan

Abstract

Optical lithography at resolution limit is a non-linear pattern transfer. One of the important issue is a mask critical dimension control because of nonlinear amplification of mask critical dimension error during image transferring on wafer. This amplification of mask error is called the MEF. This mask error factor has been widely used as an important parameter for indicating tighter CD control for the photomask for low-kl lithography generation.

Citation Download Citation

Tae-Seung Eom, Sang-Sool Koo, Seung-Weon Paek, Hee-Bom Kim, Chang-Nam Ahn, and Ki-Ho Baik "Mask critical dimension error on optical lithography", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392047

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