Effective OPC pattern generation using chemically amplified resist for 0.13-um design rule masks

Il-Ho Lee; Kyung-Han Nam; Hong-Seok Kim

doi:10.1117/12.392083

19 July 2000 Effective OPC pattern generation using chemically amplified resist for 0.13-um design rule masks

Il-Ho Lee, Kyung-Han Nam, Hong-Seok Kim

Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392083
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan

Abstract

We investigated the printability of various OPC patterns with different sizes and densities for mask technology below 0.13 micrometers design rule using CAR and 50kV e-beam system. Because of high resolution characteristics of CAR process with high acceleration voltage system, we obtained OPC printability of 0.12 micrometers even in scattering bar type and excellent pattern fidelity. How to design to get required OPC pattern, design guide was considered in this work and discussed the applicability of CAR process to practical manufacturing of OPC masks of 0.13 micrometers design rule or less.

Citation Download Citation

Il-Ho Lee, Kyung-Han Nam, and Hong-Seok Kim "Effective OPC pattern generation using chemically amplified resist for 0.13-um design rule masks", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392083

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