Paper
19 July 2000 150-nm DR contact holes die-to-database inspection
Shen Chung Kuo, Clare Wu, Yair Eran, Wolfgang Staud, Shirley Hemar, Ofer Lindman
Author Affiliations +
Abstract
Using a failure analysis-driven yield enhancements concept, based on an optimization of the mask manufacturing process and UV reticle inspection is studied and shown to improve the contact layer quality. This is achieved by relating various manufacturing processes to very fine tuned contact defect detection. In this way, selecting an optimized manufacturing process with fine-tuned inspection setup is achieved in a controlled manner. This paper presents a study, performed on a specially designed test reticle, which simulates production contact layers of design rule 250nm, 180nm and 150nm. This paper focuses on the use of advanced UV reticle inspection techniques as part of the process optimization cycle. Current inspection equipment uses traditional and insufficient methods of small contact-hole inspection and review.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shen Chung Kuo, Clare Wu, Yair Eran, Wolfgang Staud, Shirley Hemar, and Ofer Lindman "150-nm DR contact holes die-to-database inspection", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392072
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Inspection

Reticles

Photomasks

Semiconducting wafers

Manufacturing

Critical dimension metrology

Defect detection

Back to Top